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FUJITSU MICROELECTRONICS DATA SHEET
DS05-13105-3E
Memory FRAM
CMOS
256 K (32 K x 8) Bit SPI
MB85RS256
DESCRIPTION
MB85RS256 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS256 adopts the Serial Peripheral Interface (SPI). The MB85RS256 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS256 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. MB85RS256 does not take long time to write data unlike Flash memories nor E2PROM, and MB85RS256 takes no wait time.
FEATURES
* * * * * * * * Bit configuration Operating power supply voltage Operating frequency Serial Peripheral Interface Operating temperature range Data retention High endurance Package : : : : : : : : 32,768 words x 8 bits 3.0 V to 3.6 V 15 MHz (Max) SPI (Serial Peripheral Interface) Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) -20 C to +85 C 10 years (+55 C) 10 Billion Read/writes 8-pin plastic SOP (FPT-8P-M02)
Copyright(c)2005-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8
MB85RS256
PIN ASSIGNMENT
(TOP VIEW)
CS
1
8
VCC
SO
2
7
HOLD
WP
3
6
SCK
GND
4
5
SI
(FPT-8P-M02)
PIN FUNCTIONAL DESCRIPTIONS
Pin No. Pin Name Functional description Chip Select This is an input pin to make chips select. When CS is "H", device is in deselect (standby) status as long as device is not write status internally, and SO becomes High-Z. Other inputs from pins are ignored for this time. When CS is "L", device is in select (active) status. CS has to be "L" before inputting op-code. Write Protect This is a pin to control writing to a status register. When WP is "L", writing to a status register is not operated. Hold This pin is used to interrupt serial input/output without making chips deselect. When HOLD is "L", hold operation is activated, SO becomes High-Z, SCK and SI become don't care. While the hold operation, CS has to be retained "L". Serial Clock This is a clock input pin to input/output serial data. SI is loaded synchronously to a rising edge, SO is output synchronously to a falling edge. Serial Data Input This is an input pin of serial data. This inputs op-code, address, and writing data. Serial Data Output This is an output pin of serial data. Reading data of FRAM memory cell array and status register data are output. This is High-Z during standby. Supply Voltage Ground
1
CS
3
WP
7
HOLD
6
SCK
5
SI
2 8 4
SO VCC GND
2
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MB85RS256
BLOCK DIAGRAM
Serial-Parallel Converter Row-Decoder
SI
FRAM Cell Array 32,768 8
CS
Address Counter
SCK
Control Circuit
FRAM Status Register
HOLD
Column Decoder/Sense Amp/ Write Amp
WP
Data Register
SO
Parallel-Serial Converter
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MB85RS256
SPI MODE
MB85RS256 corresponds to the SPI mode 0 (CPOL = 0, CPHA = 0) , and SPI mode 3 (CPOL = 1, CPHA = 1) .
CS
SCK
SI
7 MSB
6
5
4
3
2
1
0 LSB
SPI Mode 0
CS
SCK
SI
7 MSB
6
5
4
3
2
1
0 LSB
SPI Mode 3
4
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MB85RS256
SERIAL PERIPHERAL INTERFACE (SPI)
MB85RS256 works as a slave of SPI. More than 2 devices can be connected by using microcontroller equipped with SPI port. By using a microcontroller not equipped with SPI port, SI and SO can be bus connected to use.
SCK MOSI MISO
SO
SI
SCK
SO
SI
SCK
SPI Microcontroller
MB85RS256 CS SS1 SS2 HOLD1 HOLD2 HOLD
MB85RS256 CS HOLD
MOSI : Master Out Slave In MISO : Master In Slave Out SS : Slave Select System Configuration with SPI Port
Microcontroller
SO
SI
SCK
MB85RS256 CS HOLD
System Configuration without SPI Port
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MB85RS256
STATUS REGISTER
Bit No. Bit Name Function Status Register Write Protect This is a bit composed of nonvolatile memories (FRAM). WPEN is related to WP input to protect writing to a status register (refer to " WRITING PROTECT"). Writing with the WRSR command and reading with the RDSR command are possible. Not Used Bits These are bits composed of nonvolatile memories, writing with the WRSR command is possible, and "000" is written before shipment. These bits are not used but they are read with the RDSR command. Block Protect This is a bit composed of nonvolatile memory (FRAM). This defines block size for writing protect with the WRITE command (refer to " BLOCK PROTECT"). Writing with the WRSR command and reading with the RDSR command are possible. Write Enable Latch This indicates FRAM memory and status register are writable. The WREN command is for setting, and the WRDI command is for resetting. With the RDSR command, reading is possible but writing is not possible with the WRSR command. WEL is reset after the following operations. The time when power is up. The time when the WRDI command is input. The time when the WRSR command is input. The time when the WRITE command is input. This is a bit fixed to "0".
7
WPEN
6 to 4
3 2
BP1 BP0
1
WEL
0
0
OP-CODE
MB85RS256 accepts 6 kinds of command specified in op-code. Op-code is a code composed of 8 bits shown in the table below. When invalid codes other than codes below are input, they are ignored. If CS is risen while inputting op-code, the command are not performed. Name Description Op-code WREN WRDI RDSR WRSR READ WRITE Set Write Enable Latch Reset Write Enable Latch Read Status Register Write Status Register Read Memory Code Write Memory Code 0000 0110B 0000 0100B 0000 0101B 0000 0001B 0000 0011B 0000 0010B
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COMMAND
* WREN The WREN command sets WEL (Write Enable Latch) . WEL has to be set with the WREN command before writing operation (WRSR command and WRITE command) .
CS
0 SCK
1
2
3
4
5
6
7
SI
Invalid
0
0
0
0
0
1
1
0
Invalid
SO
High-Z
* WRDI The WRDI command resets WEL (Write Enable Latch) . Writing operation (WRITE command and WRSR command) are not performed when WEL is reset.
CS
0 SCK
1
2
3
4
5
6
7
SI
Invalid
0
0
0
0
0
1
0
0
Invalid
SO
High-Z
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MB85RS256
* RDSR The RDSR command reads status register data. After op-code of RDSR is input to SI, 8-cycle clock is input to SCK. The SI value is invalid for this time. SO is output synchronously to a falling edge of SCK. Continuously reading status register is enabled by keep on sending SCK before rising CS with the RDSR command.
CS 0 SCK 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
SI
0
0
0
0
0
1
0
1
Invalid Data Out
SO
High-Z MSB LSB
Invalid
* WRSR The WRSR command writes data to the nonvolatile memory bit of status register. After performing WRSR opcode to a SI pin, 8 bits writing data is input. WEL (Write Enable Latch) is not able to be written with WRSR command. a SI value correspondent to bit 1 is ignored. Bit 0 of the status register is fixed to "0" and cannot be written. The SI value corresponding to bit 0 is ignored.
CS 0 SCK Instruction SI 0 0 0 0 0 0 0 1 7 6 MSB High-Z Data In 5 4 3 2 1 0 LSB 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
SO
8
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MB85RS256
* READ The READ command reads FRAM memory cell array data. Arbitrary 16 bits address and op-code of READ are input to SI. The most significant address bit is invalid. Then, 8-cycle clock is input to SCK. SO is output synchronously to the falling edge of SCK. While reading, the SI value is invalid. When CS is risen, the READ command is completed, but keep on reading address with automatic increment is enabled by continuously sending clock for 8 cycles each to SCK before CS is risen. When it reaches the most significant address, it rolls over to come back to the starting address, and reading cycle keeps on infinitely.
CS 0 SCK SI SO 16-bit Address OP-CODE 54 0 0 0 0 0 0 1 1 X 14 13 12 11 10 MSB High-Z 3 2 1 0 LSB MSB 7 6 5 Invalid Data Out 4 3 2 1 LSB 0 Invalid 1 2 3 4 5 6 7 8 9 10 11 12 13 18 19 20 21 22 23 24 25 26 27 28 29 30 31
* WRITE The WRITE command writes data to FRAM memory cell array. WRITE op-code, arbitrary 16 bits of address and 8 bits of writing data are input to SI. The most significant address bit is invalid. When 8 bits of writing data is input, data is written to FRAM memory cell array. Risen CS will terminate the WRITE command, but if you continue sending the writing data for 8 bits each before CS is risen, it is possible to continue writing with automatic address increment. When it reaches the most significant address, it rolls over, comes back to the starting address, and writing cycle can be continued infinitely.
CS 0 SCK SI SO 16-bit Address OP-CODE 0 0 0 0 0 0 1 0 X 14 13 12 11 10 54 MSB High-Z Data In 3 2 1 0 7 6 5 4 3 2 1 0 LSB LSB MSB 1 2 3 4 5 6 7 8 9 10 11 12 13 18 19 20 21 22 23 24 25 26 27 28 29 30 31
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MB85RS256
BLOCK PROTECT
Writing protect block is configured by the WRITE command with BP1, BP0 value of the status register. BP1 BP0 Protected Block 0 0 1 1 0 1 0 1 None 6000H to 7FFFH (upper 1/4) 4000H to 7FFFH (upper 1/2) 0000H to 7FFFH (all)
WRITING PROTECT
Writing operation of the WRITE command and the WRSR command are protected with the value of WEL, WPEN, WP as shown in the table. WEL WPEN WP Protected Blocks Unprotected Blocks Status Register 0 1 1 1 X 0 1 1 X X 0 1 Protected Protected Protected Protected Protected Unprotected Unprotected Unprotected Protected Unprotected Protected Unprotected
HOLD OPERATION
Hold status is retained without aborting a command if HOLD is "L" while CS is "L". The timing for starting and ending hold status depends on the SCK to be "H" or "L" when a HOLD pin input is transited as shown in the diagram below. Arbitrary command operation is interrupted in hold status, SCK and SI inputs become don't care. And, SO becomes High-Z while reading command (RDSR, READ) . If CS is risen with hold status, a command is aborted and device is reset.
CS
SCK
HOLD
Hold Condition
Hold Condition
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MB85RS256
ABSOLUTE MAXIMUM RATINGS
Parameter Power supply voltage Input voltage Output voltage Operating temperature Storage temperature Symbol VCC VIN VOUT TA Tstg Rating Min - 0.5 - 0.5 - 0.5 - 20 - 40 Max + 4.0 VCC + 0.5 VCC + 0.5 + 85 + 125 Unit V V V C C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
Parameter Power supply voltage Input high voltage Input low voltage Operating temperature Symbol VCC VIH VIL TA Value Min 3.0 VCC x 0.8 - 0.5 - 20 Typ 3.3 Max 3.6 VCC + 0.5 + 0.6 + 85 Unit V V V C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand.
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MB85RS256
ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(within recommended operating conditions) Parameter Input leakage current Output leakage current Operating power supply current Standby current Output high voltage Output low voltage Symbol ILI ILO ICC ISB VOH VOL Condition VIN = 0 V to VCC VOUT = 0 V to VCC SCK = 15 MHz All inputs VSS or SCK = SI = CS = VCC IOH = -2 mA IOL = 2 mA Value Min VCC x 0.8 Typ 5 3 Max 10 10 10 50 0.4 Unit A A mA A V V
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MB85RS256
2. AC Characteristics
(within recommended operating conditions) Parameter SCK clock frequency Clock high time Clock low time Chip select set up time Chip select hold time Output disable time Output data valid time Output hold time Deselect time Data in rise time Data fall time Data set up time Data hold time HOLD set up time HOLD hold time HOLD output floating time HOLD output active time Symbol fCK tCH tCL tCSU tCSH tOD tODV tOH tD tR tF tSU tH tHS tHH tHZ tLZ Value Min 0 30 30 10 10 0 60 5 5 10 10 Max 15 20 35 50 50 20 20 Unit MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
AC Test Condition
Power supply voltage Operation temperature Input voltage magnitude Input rising time Input falling time Input judge level Output judge level : 3.0 V to 3.6 V : - 20 C to + 85 C : 0.3 V to 2.7 V : 5 ns : 5 ns : VCC/2 : VCC/2
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MB85RS256
AC Load Equivalent Circuit
3.3 V
1.2 k
Output
30 pF
0.95 k
3. Pin Capacitance
Parameter Output capacitance Input capacitance Symbol CO CI Value Min Max 10 10 Unit pF pF
14
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MB85RS256
TIMING DIAGRAM
* Serial Data Timing
tD
CS tCSH tCH SCK tSU tH tCL
tCSU
SI
Valid in tODV High-Z
tOH
tOD High-Z
SO
: don't care
* Hold Timing
CS
SCK
tHS
tHS tHH
tHS tHH
tHS tHH tHH
HOLD
SO
High-Z
High-Z
tHZ
tLZ
tHZ
tLZ
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MB85RS256
POWER ON/OFF SEQUENCE
tpd VCC tr tpu VCC
3.0 V VIH (Min)
3.0 V VIH (Min)
1.0 V
1.0 V
VIL (Max)
VIL (Max)
GND
GND
CS
CS >VCC x 0.8*
CS : don't care
CS >VCC x 0.8*
CS
* : CS (Max) < VCC + 0.5 V Note : * Because turning the power-on from an intermediate level may cause malfunctions, when the power is turned on, VCC is required to be started from 0 V. * If the device does not operate within the specified conditions of read cycle, write cycle, power on/ off sequence, memory data can not be guaranteed.
Parameter CS level hold time at power OFF CS level hold time at power ON Power supply rising time
Symbol tpd tpu tr
Value Min 85 85 0.05 Max 200
Unit ns ns ms
NOTES ON USE
After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow.
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ORDERING INFORMATION
Part number MB85RS256PNF-G-JNE1 MB85RS256PNF-G-JN-ERE1 Package 8-pin plastic SOP (FPT-8P-M02) 8-pin plastic SOP (FPT-8P-M02) Embossed Carrier tape Remarks
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MB85RS256
PACKAGE DIMENSION
8-pin plastic SOP Lead pitch Package width x package length Lead shape Sealing method Mounting height Weight 1.27 mm 3.9 x 5.05 mm Gullwing Plastic mold 1.75 mm MAX 0.06 g
(FPT-8P-M02)
8-pin plastic SOP (FPT-8P-M02)
Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder.
+.010
*1 5.05 -0.20 .199 -.008
8
+0.25
0.22 -0.07 .009 -.003
5
+0.03 +.001
*2 3.900.30 6.000.40 (.154.012) (.236.016)
Details of "A" part 45 1.550.20 (Mounting height) (.061.008) 0.25(.010)
0.40(.016)
1 4
"A"
0~8
1.27(.050)
0.440.08 (.017.003)
0.13(.005)
M
0.500.20 (.020.008) 0.600.15 (.024.006)
0.150.10 (.006.004) (Stand off)
0.10(.004)
(c)2002-2008 FUJITSU MICROELECTRONICS LIMITED F08004S-c-4-8 C
2002 FUJITSU LIMITED F08004S-c-4-7
Dimensions in mm (inches). Note: The values in parentheses are reference values.
Please confirm the latest Package dimension by following URL. http://edevice.fujitsu.com/package/en-search/
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MEMO
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MB85RS256
FUJITSU MICROELECTRONICS LIMITED
Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3329 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600 Fax: +1-408-737-5999 http://www.fma.fujitsu.com/ Europe FUJITSU MICROELECTRONICS EUROPE GmbH Pittlerstrasse 47, 63225 Langen, Germany Tel: +49-6103-690-0 Fax: +49-6103-690-122 http://emea.fujitsu.com/microelectronics/ Korea FUJITSU MICROELECTRONICS KOREA LTD. 206 Kosmo Tower Building, 1002 Daechi-Dong, Gangnam-Gu, Seoul 135-280, Republic of Korea Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://kr.fujitsu.com/fmk/ Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE. LTD. 151 Lorong Chuan, #05-08 New Tech Park 556741 Singapore Tel : +65-6281-0770 Fax : +65-6281-0220 http://www.fmal.fujitsu.com/ FUJITSU MICROELECTRONICS SHANGHAI CO., LTD. Rm. 3102, Bund Center, No.222 Yan An Road (E), Shanghai 200002, China Tel : +86-21-6146-3688 Fax : +86-21-6335-1605 http://cn.fujitsu.com/fmc/ FUJITSU MICROELECTRONICS PACIFIC ASIA LTD. 10/F., World Commerce Centre, 11 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel : +852-2377-0226 Fax : +852-2376-3269 http://cn.fujitsu.com/fmc/en/
Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. Edited: Sales Promotion Department

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